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Part Name
Description
D1486R View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1486R
Silicon NPN Power Transistors
Inchange Semiconductor
D1486R Datasheet PDF : 4 Pages
1
2
3
4
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEsat
Collector-emitter saturation voltage I
C
=4A ;I
B
=0.4A
V
BE
Base-emitter on voltage
I
C
=4A ; V
CE
=5V
I
CBO
Collector cut-off current
V
CB
=120V; I
E
=0
I
EBO
Emitter cut-off current
V
EB
=3V; I
C
=0
h
FE-1
DC current gain
I
C
=20mA ; V
CE
=5V
h
FE -2
DC current gain
I
C
=1A ; V
CE
=5V
h
FE -3
DC current gain
I
C
=4A ; V
CE
=5V
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
f
T
Transition frequency
I
C
=0.5A ; V
CE
=-5V
h
FE-2
classifications
R
Q
P
40-80
60-120 100-200
Product Specification
2SD1486
MIN TYP. MAX UNIT
2.0
V
1.8
V
50
μ
A
50
μ
A
20
40
200
20
230
pF
20
MHz
2
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