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D1486R View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
D1486R
Iscsemi
Inchange Semiconductor Iscsemi
D1486R Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A
VBE
Base-emitter on voltage
IC=4A ; VCE=5V
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE -2
DC current gain
IC=1A ; VCE=5V
hFE -3
DC current gain
IC=4A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=-5V
‹ hFE-2 classifications
R
Q
P
40-80
60-120 100-200
Product Specification
2SD1486
MIN TYP. MAX UNIT
2.0
V
1.8
V
50
μA
50
μA
20
40
200
20
230
pF
20
MHz
2
 

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