D1480 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1480 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1480
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 4V
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 4V
hFE-2
DC Current Gain
IC= 1A; VCE= 4V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A; IB1= -IB2= 0.1A
hFE-1 classifications
R
Q
P
40-90 70-150 120-250
MIN TYP. MAX UNIT
60
V
2.0
V
1.2
V
200 μA
1
mA
35
40
250
0.2
μs
3.5
μs
0.7
μs
isc Website：www.iscsemi.cn
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