D1435 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
D1435 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=1mA, RBE=∞
V(BR)EBO Emitter-base breakdown voltage
IE=50mA, IC=0
VCEsat-1 Collector-emitter saturation voltage IC=8A ,IB=16mA
VCEsat-2 Collector-emitter saturation voltage IC=15A ,IB=150mA
VBEsat-1 Base-emitter saturation voltage
IC=8A ,IB=16mA
VBEsat-2 Base-emitter saturation voltage
IC=15A ,IB=150mA
ICBO
Collector cut-off current
ICEO
Collector cut-off current
VCB=100V, IE=0
VCE=80V, RBE=∞
hFE
DC current gain
IC=8A ; VCE=3V
Switching times
ton
Turn-on time
toff
Turn-off time
IC = 8 A,IB1 =-IB2 =16mA
Product Specification
2SD1435
MIN TYP. MAX UNIT
100
V
7
V
2.0
V
3.0
V
2.5
V
3.5
V
100 μA
1.0
μA
1000
20000
2.0
μs
8.0
μs
2
|
|
Share Link: 