DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

D1425 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
D1425
Iscsemi
Inchange Semiconductor Iscsemi
D1425 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.6A
VBE(sat) Base-emitter saturation voltage
IC=2A; IB=0.6A
ICBO
Collector cut-off current
hFE
DC current gain
fT
Transition freuqency
VCB=500V; IE=0
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V;f=1MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
VF
Diode forward voltage
IF=2.5A
tf
Fall time
IC=2A;IB1=0.6A
Product Specification
2SD1425
MIN TYP. MAX UNIT
5
V
8.0
V
1.5
V
10
μA
8
3
MHz
95
pF
2.0
V
1.0
μs
2
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]