D1350 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
D1350 Datasheet PDF : 3 Pages
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Transistors
2SD1350, 2SD1350A
Silicon NPN triple diffusion planar type
For high breakdown voltage switching
■ Features
• High collector-base voltage (Emitter open) VCBO
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
• M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SD1350 VCBO
400
V
(Emitter open)
2SD1350A
600
Collector-emitter voltage 2SD1350 VCEO
400
V
(Base open)
2SD1350A
500
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICP
1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
2SD1350 VCBO IC = 100 µA, IE = 0
400
V
(Emitter open)
2SD1350A
600
Collector-emitter voltage 2SD1350 VCEO IC = 500 µA, IB = 0
400
V
(Base open)
2SD1350A
500
Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0
5
V
Forward current transfer ratio
hFE VCE = 5 V, IC = 30 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = 250 mA, IB = 50 mA
1.5
V
Base-emitter saturation voltage
VBE(sat) IC = 250 mA, IB = 50 mA
1.5
V
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT
VCB = 30 V, IE = −20 mA, f = 200 MHz
Cob VCB = 30 V, IE = 0, f = 1 MHz
55
MHz
7
pF
Turn-on time
Fall time
Storage time
ton
VCC = 200 V, IC = 100 mA
IB1 = 10 mA, IB2 = −10 mA
tf
VCC = 200 V, IC = 100 mA
IB1 = 10 mA, IB2 = −10 mA
tstg
VCC = 200 V, IC = 100 mA
IB1 = 10 mA, IB2 = −10 mA
0.4
µs
0.7
µs
3.6
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJC00218BED
1
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