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2SD1006 View Datasheet(PDF) - TY Semiconductor

Part Name
Description
Manufacturer
2SD1006
Twtysemi
TY Semiconductor Twtysemi
2SD1006 Datasheet PDF : 0 Pages
SMD Type
Features
High collector to emitter voltage: VCEO 100V.
TransistIoCrs
Product specification
2SD1006
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector l power dissipation
Junction temperature
Storage temperature
*. PW 10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Base-emitter voltage *
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transition product
*. PW 350ìs,duty cycle 2%
hFE Classification
Marking
hFE
HM
90 180
HL
135 270
Symbol
Rating
Unit
VCBO
100
V
VCEO
100
V
VEBO
5
V
IC
0.7
A
IC(pu)
1.2
A
Pc
2
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VBE VCE =10V , IC = 10mA
ICBO VCB = 100V, IE=0
IEBO VEB = 5V, IC=0
VCE =1V , IC = 5.0mA
hFE
VCE =1V , IC = 100mA
VCE(sat) IC = 500mA , IB = 50mA
VBE(sat) IC = 500mA , IB = 50mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
fT VCE = 10V , IE = -10mA
Min Typ Max Unit
550 620 650 mV
100 nA
100 nA
45 200
90 200 400
0.3 0.6 V
0.9 1.5 V
10
pF
90
MHz
HK
200 400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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