2SD113 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD113 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD113
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
10
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 3A
2.5
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
2
mA
IEBO
hFE-1
hFE-2
COB
fT
www.iscsemi.cn Emitter Cutoff Current
VEB= 10V; IC= 0
DC Current Gain
IC= 1A; VCE= 5V
50
DC Current Gain
IC= 15A; VCE= 5V
10
Output Capacitance
IE= 0; VCB= 50V; ftest= 1.0MHz
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
400
1.5
50
300
mA
pF
MHz
hFE-1 Classifications
O
Y
50-150 100-300
isc Website：www.iscsemi.cn
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