2SD1127 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SD1127 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1127
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 25mA
ICBO
Collector Cutoff Current
VCB= 120V; IE=0
hFE
DC Current Gain
IC= 10A; VCE= 2V
Switching times
ton
Turn-On Time
toff
Turn-Off Time
IC= 5A, IB1= -IB2= 10mA
MIN TYP. MAX UNIT
120
V
7
V
1.5
V
2.0
V
100 μA
1000
0.8
μs
8.0
μs
isc Website：www.iscsemi.cn
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