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Part Name
Description
2SD1136 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
2SD1136
Silicon NPN Triple Diffused
Hitachi -> Renesas Electronics
2SD1136 Datasheet PDF : 5 Pages
1
2
3
4
5
2SD1136
Collector to Emitter Saturation Voltage
vs. Base Current
10
T
C
= 25
°
C
5
2
2A
4A
1.0
I
C
= 1 A
0.5
0.2
0.1
10
20 50 100 200 500 1,000
Base current I
B
(mA)
Collector to Emitter Saturation Voltage
vs. Collector Current
1.5
I
C
= 10 I
B
1.0
0.5
T
C
= 75
°
C
25
0
0.05 0.01 0.03 0.1 0.3 1.0
Collector current I
C
(A)
–25
5
Base to Emitter Saturation Voltage
vs. Collector Current
1.5
I
C
= 10 I
B
1.0
T
C
= –25
°
C
25
0.5
75
0
0.005 0.01 0.03 0.1 0.3 1.0 3 5
Collector current I
C
(A)
4
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