2SD1136 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SD1136

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1136

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector surge current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

IC(peak)

IC(surge)

PC

PC*1

Tj

Tstg

Ratings

200

80

5

4

5

15

1.8

30

150

–45 to +150

Unit

V

V

V

A

A

A

W

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 200

—

voltage

Collector to emitter breakdown V(BR)CEO 80

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

ICES

—

—

DC current transfer ratio

hFE

20

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

Fall time

Note: 1. Pulse test.

tf

—

—

Max

—

—

—

1.0

—

1.5

1.5

1.0

Unit

V

Test conditions

IC = 1 mA, IE = 0

V

IC = 10 mA, RBE = ∞

V

IE = 1 mA, IC = 0

mA

VCE = 150 V, RBE = 0

VCE = 5 V, IC = 4 A*1

V

IC = 4 A, IB = 0.4 A*1

V

IC = 4 A, IB = 0.4 A*1

µs

IC = 3.5 A, IB1 = 0.45 A, LB = 0

2

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