2SD1119 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
2SD1119 Datasheet PDF : 2 Pages
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Transistor
2SD1119
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Satisfactory operation performances at high efficiency with the
low-voltage power supply.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage VCEO
25
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
5
A
Collector current
IC
3
A
Collector power dissipation PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : T
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
VCB = 10V, IE = 0
IC = 1mA, IB = 0
25
IE = 10µA, IC = 0
7
VCE = 2V, IC = 0.5A*2
230
VCE = 2V, IC = 2A*2
150
IC = 3A, IB = 0.1A*2
VCB = 6V, IE = –50mA, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
hFE1
Marking Symbol
230 ~ 380
TQ
R
340 ~ 600
TR
typ max Unit
0.1
µA
V
V
600
1
V
150
MHz
50
pF
*2 Pulse measurement
1
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