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2SC5048 查看數據表(PDF) - Quanzhou Jinmei Electronic

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2SC5048 Silicon NPN Power Transistors JMNIC
Quanzhou Jinmei Electronic JMNIC
2SC5048 Datasheet PDF : 3 Pages
1 2 3
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A IB=2A
VBEsat Base-emitter saturation voltage
IC=8A IB=2A
ICBO
Collector cut-off current
VCB=1500V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IE=0.1A ; VCE=10V
Switching times (inductive load)
ts
Storage time
tf
Fall time
ICP=6A;IB1(end) =1.15A
fH=64kHz
www.jmnic.com
2SC5048
MIN TYP. MAX UNIT
600
V
3
V
1.0
1.4
V
1
mA
10
μA
10
30
4
8
160
pF
1.7
MHz
2.5
4
μs
0.15
0.3
μs
JMnic
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