2SC4703 View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

2SC4703

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

Renesas Electronics 

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4703

NPN EPITAXIAL SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

3-PIN POWER MINIMOLD

DESCRIPTION

The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).

This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It employs surface

mount type plastic package, power minimold (SOT-89).

FEATURES

• Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBµV/75Ω

• Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)

• Small package : 3-pin power minimold package

ORDERING INFORMATION

Part Number

2SC4703

2SC4703-T1

Quantity

25 pcs (Non reel)

1 kpcs/reel

Supplying Form

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

25

V

Collector to Emitter Voltage

VCEO

12

V

Emitter to Base Voltage

VEBO

2.5

V

Collector Current

Total Power Dissipation

IC

150

mA

P Note

tot

1.8

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10339EJ01V1DS (1st edition)

Date Published May 2003 CP(K)

Printed in Japan

The mark • shows major revised points.

© NEC Compound Semiconductor Devices 1994, 2003

Share Link: