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2SC4026 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
2SC4026
Iscsemi
Inchange Semiconductor Iscsemi
2SC4026 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4026
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
400
V
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2A ;IB=0.4A
VCB=500V; IE=0
VEB=5V; IC=0
1.5
V
100 μA
100 μA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=2A ; VCE=5V
8
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
5
MHz
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A ;IB1=0.4A;IB2=-0.8A
VCC=150V
0.7
μs
2.0
μs
0.3
μs
2
 

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