2SC3607 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SC3607 Datasheet PDF : 8 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3607
2SC3607
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, high gain.
· NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
VCBO
VCEO
VEBO
IB
IC
PC
20
V
12
V
3
V
40
mA
80
mA
400
800
mW
(Note 1)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
-55~125
°C
Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 t
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA, f = 500 MHz
VCE = 10 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
VCE = 10 V, IC = 40 mA, f = 1 GHz
Min Typ. Max Unit
5
6.5
¾ GHz
¾
15
¾
dB
6
9.5
¾
¾
1.1
¾
dB
¾
1.8
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collecter output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
¾
¾
1
mA
VEB = 1 V, IC = 0
¾
¾
1
mA
VCE = 10 V, IC = 20 mA
30
¾
250
¾ 1.15 ¾
pF
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
¾
0.8 1.25 pF
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1
2003-03-19
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