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2SC3110 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
2SC3110
Iscsemi
Inchange Semiconductor Iscsemi
2SC3110 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3110
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15
V
VCEO Collector-Emitter Voltage
12
V
VEBO Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
30
mA
ICP
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
50
mA
0.2
W
150
-55~150
isc Websitewww.iscsemi.cn
 

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