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2SC2235 View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
Manufacturer
2SC2235
UTC
Unisonic Technologies UTC
2SC2235 Datasheet PDF : 4 Pages
1 2 3 4
2SC2235
TYPICAL CHARACTERISTICS
Collector Current vs. Collector Emitter
Voltage
1000 Common Emitter
TA=25°C
800
15
10
7
600
5
4
400
3
2
200
IB=1mA
0
00
24
6
8 10 12 14
Collector Emitter Voltage, VCE (V)
Collector Emitter Saturation Voltage vs.
0.5
Collector Current
Common Emitter
0.3 Ic/IB =10
0.1 TA=100°C
0.05
0.03
TA=25°C
TA=-25°C
0.01
3
10 30 100 300
Collector Current, Ic (mA)
1000
3000
1000
500
300
Safe Operating Area
Ic Max.(Pulse) *
Ic Max. (Continous)
1ms *
10ms *
100
50 DC Operation
30
10
5
3
*Single Nonrepetitive Pulse TA=25°C
Curve must be derated linearly with
increase in temperature
1
0.5 1 3 5 10 30 50 100 300 5001000
Collector Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
1000
500
DC Current Gain vs. Collector Current
Common Emitter
VCE=5V
300
TA=100°C
100
50
30
10 3
TA=25°C
TA=-25°C
10 30 100 300
Collector Current, Ic (mA)
1000
Collector Current vs. Base Emitter
800
Voltage
Common Emitter
VCE=5V
600
TA=100°C
400
TA=25°C
TA=-25°C
200
00
0.2 0.4 0.6 0.8 1.0 1.2
Base Emitter Voltage, VBE (V)
Collector Power Dissipaton vs. Ambient
1000
Temperature
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, TA (°C)
3 of 4
QW-R211-012.C
 

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