SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1116
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=180V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=12V
MIN TYP. MAX UNIT
120
V
180
V
6
V
2.0
V
0.1 mA
0.1 mA
50
10
MHz
2