2SC1114 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

Manufacturer

2SC1114

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1114

CHARACTERISTICS

Tj=25? unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A

VBEsat Base-emitter saturation voltage

IC=2A ;IB=0.4A

ICBO

Collector cut-off current

VCB=325V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=1A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=12V

MIN TYP. MAX UNIT

300

V

325

V

7

V

0.8

V

1.5

V

100 µA

100 µA

20

10

2

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