Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0
V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=100μA;IC=0
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA
VBEsat Base-emitter saturation voltage
IC=50mA ;IB=5mA
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE
DC current gain
IC=50mA ; VCE=10V
Product Specification
2SC1163
MIN TYP. MAX UNIT
300
V
300
V
4
V
1.0
V
1.5
V
10
μA
10
μA
30
240
2