2SC1098A View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SC1098A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1098 2SC1098A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15 A
2.0
V
VBEsat Base-emitter saturation voltage
IC=1.5A; IB=0.15 A
2.0
V
V(BR)CEO
Collector-emitter
breakdown voltage
2SC1098
2SC1098A
IC=10mA; IB=0
45
V
60
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=0.5A ; VCE=5V
40
250
ICBO
Collector cut-off current
VCB=45V ;IE=0
1.0 μA
IEBO
Emitter cut-off current
导体 COB
Output capacitance
固I电NC半HANGE SEMICONDUCTOR fT
Transition frequency
hFE-2 Classifications
N
M
L
VEB=3V; IC=0
IE=0; VCB=10V;f=1MHz
IC=0.1A ; VCE=5V
K
1.0 μA
40
pF
60
MHz
40-60 50-100 80-160 120-250
2
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