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2SC1030A View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
2SC1030A
Iscsemi
Inchange Semiconductor Iscsemi
2SC1030A Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
‹ hFE-1 classifications
A
B
C
35-70 60-120 100-200
Product Specification
2SC1030
MIN TYP. MAX UNIT
80
V
150
V
5
V
1.5 V
0.1 mA
0.1 mA
35
200
22
10
MHz
2
 

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