2SA812 View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
| 2SA812 Datasheet PDF : 0 Pages | |||
Product specification
2SA812
Features
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)
High Voltage: VCEO = -50 V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-5.0
V
IC
-100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage
Base to emitter voltage
Output capacitance
Transition frequency
* Pulsed: PW 350 s, Duty Cycle 2%
Symbol
Testconditons
ICBO VCB = -60 V, IE = 0 A
IEBO VEB = -5.0 V, IC = 0 A
hFE VCE = -6.0 V, IC = -1.0 mA
VCE(sat) IC = -100 mA, IB = -10 mA
VBE VCE = 6.0 V, IC = -1.0 mA
Cob VCE = -10 V, IE = 0 A, f = 1.0 MHz
fT VCE = -6.0 V, IE = 10 mA
Min Typ Max Unit
-0.1
A
-0.1
A
90 200 600
-0.18 -0.3 V
-0.58 -0.62 -0.68 V
4.5
pF
180
MHz
hFE Classification
Marking
hFE
M4
90 180
M5
135 270
M6
200 400
M7
300 600
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sales@twtysemi.com
4008-318-123
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