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2SA0914 View Datasheet(PDF) - Panasonic Corporation

Part Name2SA0914 Panasonic
Panasonic Corporation Panasonic
DescriptionSilicon PNP epitaxial planar type
2SA0914 Datasheet PDF : 3 Pages
1 2 3
Power Transistors
2SA0914 (2SA914)
Silicon PNP epitaxial planar type
For audio system/pli drive
Complementary to 2SC1953
Features
A complementary pair with 2SC1953, is optimum for the pre-
driver stage of a 60 W to 100 W output amplifier
TO-126B package which requires no insulation plate for instal-
lation to the heat sink
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
150
V
Collector-emitter voltage (Base open) VCEO
150
V
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCEO
VEBO
ICBO
hFE
VCE(sat)
fT
Cob
IC = 100 µA, IB = 0
IE = 10 µA, IC = 0
VCB = −100 V, IE = 0
VCE = −5 V, IC = −10 mA
IC = −30 mA, IB = −3 mA
VCB = −10 V, IE = 10 mA, f = 200 MHz
VCB = 6 V, IE = 0, f = 1 MHz
150
5
130
70
V
V
1
µA
330
1
V
MHz
5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE
130 to 220 185 to 330
Publication date: December 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00005CED
1
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