A1096A View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

A1096A

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1096 2SA1096A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SA1096

2SA1096A

IC=-2mA ; IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A

VBEsat Base-emitter saturation voltage

IC=-1.5A ;IB=-0.15A

ICEO

Collector cut-off current

VCE=-10V; IB=0

ICBO

Collector cut-off current

VCB=-20V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-20V,f=1MHz

fT

Transition frequency

IE=-0.5A ; VCB=-5V,f=200MHz

MIN TYP. MAX UNIT

-50

V

-60

-70

V

-1.0

V

-1.5

V

-1

μA

-100 μA

-10 μA

80

220

55

pF

150

MHz

‹ hFE Classifications

Q

R

80-160

120-220

2

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