2SA1095 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SA1095

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-100mA; IB=B 0

V(BR)EBO Emitter-base breakdown voltage

IE=-10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=B -0.5 A

VBE

Base-emitter on voltage

IC=-5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-160V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-10V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

‹ hFE classifications

R

O

Y

55-110 80-160 120-240

Product Specification

2SA1095

MIN TYP. MAX UNIT

-160

V

-5

V

-2.0

V

-2.0

V

-50 μA

-50 μA

55

240

40

60

MHz

350

pF

2

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