A1091 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
| A1091 Datasheet PDF : 0 Pages | |||
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1091
2SA1091
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
• High voltage: VCBO = −300 V, VCEO = −300 V
• Low saturation voltage: VCE (sat) = −0.5 V (max)
• Small collector output capacitance: Cob = 6 pF (typ.)
• Complementary to 2SC2551.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−300
V
−300
V
−8
V
−100
mA
−20
mA
400
mW
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −300 V, IE = 0
IEBO
VEB = −8 V, IC = 0
V (BR) CBO IC = −0.1 mA, IE = 0
V (BR) CEO IC = −1 mA, IB = 0
hFE (1)
VCE = −10 V, IC = −20 mA
(Note)
hFE (2) VCE = −10 V, IC = −1 mA
VCE (sat) IC = −20 mA, IB = −2 mA
VBE (sat) IC = −20 mA, IB = −2 mA
fT
VCE = −10 V, IC = −20 mA
Cob
VCB = −20 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 30~90 O: 50~150
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
−300 ⎯
⎯
V
−300 ⎯
⎯
V
30
⎯
150
20
⎯
⎯
⎯
⎯
−0.5
V
⎯
⎯
−1.2
V
40
60
⎯ MHz
⎯
6
8
pF
1
2007-11-01
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