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2SA1010M View Datasheet(PDF) - Renesas Electronics

Part Name2SA1010M Renesas
Renesas Electronics Renesas
DescriptionPNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
2SA1010M Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = 5.0 A, IB1 = 0.5 A, L = 1 mH
Collector to emitter voltage VCEX(SUS)1 IC = 5.0 A, IB1 = IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector to emitter voltage VCEX(SUS)2 IC = 10 A, IB1 = 1.0 A, IB2 = 0.5 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
Collector cutoff current
ICER
VCE = 100 V, RBE = 51 , Ta = 125 °C
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) = 1.5 V,
Ta = 125 °C
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
DC current gain
hFE1
VCE = 5.0 V, IC = 0.5 A*
DC current gain
hFE2
VCE = 5.0 V, IC = 3.0 A*
DC current gain
hFE3
VCE = 5.0 V, IC = 5.0 A*
Collector saturation voltage VCE(sat) IC = 5.0 A, IB = 0.5 A*
Base saturation voltage
VBE(sat) IC = 5.0 A, IB = 0.5 A*
Turn-on time
Storage time
Fall time
ton
IC = 5.0 A, RL = 10 ,
tstg
IB1 = IB2 = 0.5 A, VCC ≅ −50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
40 to 80
L
60 to 120
K
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SA1010
MIN.
TYP.
MAX.
Unit
100
V
100
V
100
V
10
µA
1.0
mA
10
µA
1.0
mA
10
µA
40
200
40
200
20
0.6
V
1.5
V
0.5
µs
1.5
µs
0.5
µs
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
2
Data Sheet D16118EJ2V0DS
Direct download click here

 

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