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2SA1010M View Datasheet(PDF) - Renesas Electronics

Part Name2SA1010M Renesas
Renesas Electronics Renesas
DescriptionPNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
2SA1010M Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
7.0
A
Collector current (pulse)
IC(pulse)*
15
A
Base current (DC)
IB(DC)
3.5
A
Total power dissipation
PT (Tc = 25 °C)
40
W
Total power dissipation
PT (Ta = 25 °C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
* PW 300 µs, duty cycle 10%
PACKAGE DRAWING (UNIT: mm)
Pin Connection
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16118EJ2V0DS00
©
Date Published April 2002 N CP(K)
Printed in Japan
2002
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