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2SA1015L-Y-K View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
Manufacturer
2SA1015L-Y-K
UTC
Unisonic Technologies UTC
2SA1015L-Y-K Datasheet PDF : 0 Pages
2SA1015
„ TYPICAL CHARACTERISTICS
Static characteristics
-50
-40
IB=-300µA
-30
IB=-250µA
-20
IB=-200µA
IB=-150µA
-10
IB=-100µA
IB=-50µA
0
-0
-4
-8
-12 -16 -20
Collector-Emitter Voltage, BVCEO (V)
Base-Emitter on Voltage
-102
-101
VCE=-6V
PNP SILICON TRANSISTOR
DC Current Gain
103
VCE=-6V
102
101
100
-10-1
-100
-101
-102
-103
Collector current, IC (mA)
Saturation voltage
-101 IC=10xIB
-100
VBE(SAT)
-100
-10-1
0
-0.2 -0.4 -0.6 -0.8 -1.0
Base-Emitter Voltage, BVBEO (V)
Current Gain-Bandwidth Product
103
VCE=-6V
102
-10-1
VCE(SAT)
-10-2
-10-1
-100
-101
-102
-103
Collector Current, IC (mA)
Collector Output Capacitance
-102
-10-1
f=1MHz
IE=0
-101
101
-100
100
-10-1
-100
-101
-102
Collector current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
-10-1
-100
-101
-102
-103
Collector-Base Voltage, BVCBO (V)
3of 4
QW-R201-004.C
 

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