2SA1015
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-150
mA
Base Current
IB
-50
mA
Collector Dissipation
PC
400
mW
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
SYMBOL
TEST CONDITIONS
BVCBO IC=-100μA, IE=0
BVCEO IC=-10mA, IB=0
BVEBO IE=-10μA, IC=0
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE1 VCE=-6V, IC=-2mA
hFE2 VCE=-6V, IC=-150mA
VCE(SAT) IC=-100mA, IB=-10mA
VBE(SAT) IC=-100mA, IB=-10mA
COB VCB=-10V, IE=0, f=1MHz
fT VCE=-10V, Ic=-1mA
NF VCE=-6V , IC=-0.1mA,
RG=1kΩ, f=100Hz
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
GR
200-400
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-100 nA
-100 nA
120
700
25
-0.1 -0.3 V
-1.1 V
4.0 7.0 pF
80
MHz
0.5 6 dB
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-004.C