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2SA1015G View Datasheet(PDF) - Unisonic Technologies

Part Name
Description
Manufacturer
2SA1015G
UTC
Unisonic Technologies UTC
2SA1015G Datasheet PDF : 0 Pages
2SA1015
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-150
mA
Base Current
IB
-50
mA
Collector Dissipation
PC
400
mW
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
SYMBOL
TEST CONDITIONS
BVCBO IC=-100μA, IE=0
BVCEO IC=-10mA, IB=0
BVEBO IE=-10μA, IC=0
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE1 VCE=-6V, IC=-2mA
hFE2 VCE=-6V, IC=-150mA
VCE(SAT) IC=-100mA, IB=-10mA
VBE(SAT) IC=-100mA, IB=-10mA
COB VCB=-10V, IE=0, f=1MHz
fT VCE=-10V, Ic=-1mA
NF VCE=-6V , IC=-0.1mA,
RG=1k, f=100Hz
„ CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
GR
200-400
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-100 nA
-100 nA
120
700
25
-0.1 -0.3 V
-1.1 V
4.0 7.0 pF
80
MHz
0.5 6 dB
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2of 4
QW-R201-004.C
 

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