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2SA1012L-Y-TN3-T View Datasheet(PDF) - Unisonic Technologies

Part Name2SA1012L-Y-TN3-T UTC
Unisonic Technologies UTC
DescriptionHIGH CURRENT SWITCHING APPLICATION
2SA1012L-Y-TN3-T Datasheet PDF : 4 Pages
1 2 3 4
2SA1012
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Collector-Emitter Voltage
VEBO
-5
V
Peak Collector Current
IC
-5
A
Power Dissipation
Junction Temperature
Storage Temperature
PD
25
W
TJ
150
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Switching time
Fall time
SYMBOL
TEST CONDITIONS
BVCBO IC=-100µA, IE=0
BVCEO IC=-10mA, IB=0
BVEBO IE=-100µA, IC=0
ICBO VCB=-50V, IE=0
IEBO VEB=-5V, IC=0
hFE1 VCE=-1V, IC=-1A
hFE2 VCE=-1V, IC=-3A
VCE (SAT) IC=-3A, IB=-0.15A
VBE (SAT) IC=-3A, IB=-0.15A
fT
VCE=-4V, IC=-1A
Cob VCB=-10V, IE=0, f=1MHz
tON
tS
tF
MIN TYP MAX UNIT
-60
V
-50
V
-5
V
-1.0 µA
-1.0 µA
70
240
30
-0.2 -0.4 V
-0.9 -1.2 V
60
MHz
170
pF
0.1
µs
1.0
µs
0.1
µs
CLASSIFICATION of hFE1
RANK
RANGE
O
70 ~ 140
Y
120 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-015,E
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