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2SA1015L-GR View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
2SA1015L-GR Datasheet PDF : 0 Pages
2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
Unit: mm
· High voltage and high current: VCEO = 50 V (min),
IC = −150 mA (max)
· Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = 6 V, IC = −150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
· Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
· Complementary to 2SC1815 (L)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
-50
V
-50
V
-5
V
-150
mA
-50
mA
400
mW
125
°C
-55~125
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB = -50 V, IE = 0
VEB = -5 V, IC = 0
DC current gain
hFE (1)
VCE = -6 V, IC = -2 mA
(Note)
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE (2)
VCE (sat)
VBE (sat)
VCE = -6 V, IC = -150 mA
IC = -100 mA, IB = -10 mA
IC = -100 mA, IB = -10 mA
Transition frequency
fT
VCE = -10 V, IC = -1 mA
Collector output capacitance
Cob
VCB = -10 V, IE = 0
f = 1 MHz
Base intrinsic resistance
rbb’
VCB = -10 V, IE = 1 mA
f = 30 MHz
Noise figure
NF (1)
NF (2)
VCE = -6 V, IC = -0.1 mA
f = 100 Hz, RG = 10 kW
VCE = -6 V, IC = -0.1 mA
f = 1 kHz, RG = 10 kW
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Min Typ. Max Unit
¾
¾ -0.1 mA
¾
¾ -0.1 mA
70
¾ 400
25
80
¾
¾ -0.1 -0.3
V
¾
¾ -1.1
V
80
¾
¾ MHz
¾
4
7
pF
¾
30
¾
W
¾
0.5
6
dB
¾
0.2
3
1
2003-03-27
 

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