2PD601AQW View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

2PD601AQW

NPN general purpose transistors; 50 V, 100 mA

Philips Electronics 

Philips Semiconductors

NPN general purpose transistors;

50 V, 100 mA

Product specification

2PD601A series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector-base cut-off current

IEBO

hFE

hFE

VCEsat

Cc

fT

emitter-base cut-off current

DC current gain

DC current gain

group Q

group R

group S

collector-emitter saturation voltage

collector capacitance

transition frequency

CONDITIONS

IE = 0; VCB = 60 V

IE = 0; VCB = 60 V; Tj = 150 °C

IC = 0; VEB = 5 V

IC = 100 mA; VCE = 2 V; note 1

IC = 2 mA; VCE = 10 V

IC = 100 mA; IB = 10 mA; note 1

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = 2 mA; VCE = 10 V;

f = 100 MHz

MIN.

−

−

−

90

160

210

290

−

−

100

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

MAX.

10

5

10

−

260

340

460

250

3

−

UNIT

nA

µA

nA

mV

pF

MHz

2004 Feb 12

4

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