2N5366 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
2N5366 Datasheet PDF : 4 Pages
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2N5366
PNP General Purpose Amplifier
• This device is designed for general purpose amplifiers applications at
collector currents to 300mA.
• Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
- Continuous
Operating and Storage Junction Temperature Range
Value
40
40
4.0
500
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
ICBO
ICES
IEBO
hFE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Collector-Emitter Saturation Voltage
VBE(on)
Cob
Cib
hfe
Base-Emitter On Voltage
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Test Condition
IC = 10µA
Min. Typ. Max. Units
40
V
IC = 10mA
IC = 10µA
40
V
4.0
V
VCB = 40V
100 nA
VCB = 40V
VEB = 4.0V
100 nA
10 µA
VCE = 10V, IC = 2.0mA
VCE = 1.0V, IC = 50mA
VCE = 5.0V, IC = 300mA
80
100
300
40
IC = 50mA, IB = 2.5mA
IC = 300mA, IB = 30mA
0.25 V
1.0
IC = 50mA, IB = 2.5mA
1.1
IC = 300mA, IB = 30mA
2.0
VCE = 10V, IC = 2.0mA
0.5
0.8 V
VCB = 10V, f = 1MHz
8.0 pF
VCB = 0.5V, f = 1MHz
35 pF
VCE = 10V, IC = 2.0mA, f = 1MHz 80 450
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
625
5.0
200
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, July 2002
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