2N3994A View Datasheet(PDF) - InterFET

Part Name

Description

Manufacturer

2N3994A

P-Channel Silicon Junction Field-Effect Transistor

InterFET  

B-8

01/99

2N3994, 2N3994A

P-Channel Silicon Junction Field-Effect Transistor

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Absolute maximum ratings at TA = 25¡C

Reverse Gate Source Voltage

Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating

25 V

25 V

– 10 mA

300 mW

2.4 mW/°C

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

Drain Reverse Current

Drain Cutoff Current

Dynamic Electrical Characteristics

Drain Source ON Resistance

Common Source

Forward Transmittance

Common Source Input Capacitance

Common Source

Reverse Transfer Capacitance

V(BR)GSS

VGS(OFF)

IDSS

IDGO

ID(OFF)

2N3994 2N3994A

Min Max Min Max Unit

25

25

V

1 5.5 1 5.5 V

–2

–2

mA

– 1.2

– 1.2 nA

– 1.2

– 1.2 µA

– 1.2

– 1.2 nA

–1

– 1 µA

Process PJ99

Test Conditions

IG = 1 µA, VDS = ØV

VDS = – 10V, ID = – 1 µA

VDS = – 10V, VGS = ØV

VDG = – 15V, IS = ØA

VDG = – 15V, IS = ØA

VDS = – 10V, VGS = 10V

VDS = – 10V, VGS = 10V

TA = 150°C

TA = 150°C

rds(on)

| Yfs |

Ciss

Crss

300

300 Ω

4 10 5 10 mS

16

12 pF

5

3.5 pF

VGS = ØV, ID = Ø A

VDS = – 10V, VGS = ØV

VDS = – 10V, VGS = ØV

VDS = Ø, VGS = 10V

f = 1 kHz

f = 1 kHz

f = 1 MHz

f = 1 MHz

TOÐ72 Package

Dimensions in Inches (mm)

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

Pin Configuration

1 Source, 2 Gate, 3 Drain, 4 Case

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