1SV232 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
1SV232 Datasheet PDF : 3 Pages
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV232
1SV232
CATV Tuning
• High capacitance ratio: C2 V/C25 V = 10.5 (typ.)
• Excellent C-V characteristics, and small tracking error.
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
VR
VRM
Tj
Tstg
30
V
35 (RL = 10 kΩ)
V
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C2 V
C25 V
C2 V/C25 V
rs
IR = 1 μA
VR = 28 V
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
⎯
VR = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2.0%.
C (max) − C (min) <= 0.02
C (min)
(VR = 2~25 V)
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
10
nA
28 30.3 32
pF
2.75 2.90 3.10 pF
10 10.5 ⎯
⎯
⎯ 0.55 0.70 Ω
1
2007-11-01
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