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1SS187 View Datasheet(PDF) - Semtech Electronics LTD.

Part Name
Description
Manufacturer
1SS187
Semtech-Electronics
Semtech Electronics LTD. Semtech-Electronics
1SS187 Datasheet PDF : 2 Pages
1 2
1SS187
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 30 V
at VR = 80 V
Total Capacitance
at VR = 0 , f = 1 MHz
Reverse Recovery Time
at IF = 10 mA
3
12
Marking Code: D3
SOT-23 Plastic Package
Symbol
Value
Unit
VRM
85
V
VR
80
V
IO
100
mA
IFM
300
mA
IFSM
2
A
Ptot
150
mW
Tj
150
OC
Ts
- 55 to + 150
OC
Symbol
Max.
Unit
VF
1.2
V
IR
0.1
µA
0.5
CT
4
pF
trr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/01/2008
 

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