TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Ultra High Speed Switching Application
AEC-Q101 Qualified (Note1)
Small package
: SC-59
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)
Note1: For detail information, please contact to our sales.
1SS193
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
85
V
80
V
300
mA
100
mA
2
A
150
mW
150
°C
−55 to 150
°C
JEDEC
TO–236MOD
JEITA
SC-59
TOSHIBA
2-3F1S
Weight: 12 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test Condition
IF =1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0 V, f = 1MHz
IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9 3.0
pF
―
1.6 4.0
ns
Start of commercial production
1982-05
1
2017-10-19