1SS118 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

1SS118

Silicon Epitaxial Planar Diode for High Speed Switching

Hitachi -> Renesas Electronics 

1SS118

Absolute Maximum Ratings (Ta = 25°C)

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average forward current

Power dissipation

Junction temperature

Storage temperature

Note: Value at duration of 1µs

Symbol

VRM

VR

I FM

I FSM *

IO

Pd

Tj

Tstg

Value

Unit

75

V

50

V

600

mA

4

A

200

mA

500

mW

175

°C

–65 to +175

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

VF

Reverse current

IR

Capacitance

C

Reverse recovery time trr

—

—

1.0

V

IF = 10mA

—

—

0.1

µA

VR = 50V

—

—

3.5

pF

VR = 0V, f = 1MHz

—

—

3.0

ns

IF = 10mA, VR = 6V, Irr = 0.1IR,

RL = 50Ω

Share Link: