1SS110 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

1SS110

Silicon Epitaxial Planar Diode for Tuner Band Switch

Hitachi -> Renesas Electronics 

1SS110

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Forward current

Junction temperature

Storage temperature

Symbol

VR

IF

Tj

Tstg

Value

Unit

35

V

100

mA

175

°C

–65 to +175

°C

Electrical Characteristics (Ta = 25°C)

Item

Forward voltage

Reverse voltage

Reverse current

Capacitance

Forward resistance

Symbol Min Typ Max Unit Test Condition

VF

—

—

1.0

V

IF = 10mA

VR

35

—

—

V

IR = 10µA

IR

—

—

0.1

µA

VR = 25V

C

—

—

1.2

pF

VR = 6V, f = 1MHz

rf

—

—

0.9

Ω

IF = 2mA, f = 100MHz

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