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MC74VHC1G86DFT1 Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
производитель
MC74VHC1G86DFT1
ONSEMI
ON Semiconductor ONSEMI
MC74VHC1G86DFT1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
K
t
TOP
COVER
TAPE
B1
K0
SEE
NOTE 2
FOR MACHINE REFERENCE
ONLY
INCLUDING DRAFT AND RADII
CONCENTRIC AROUND B0
MC74VHC1G86
10 PITCHES
CUMULATIVE
TOLERANCE ON
P0
TAPE
±0.2 mm
D
P2
(±0.008”)
E
A0 SEE NOTE 2
+ B0
+
P
EMBOSSMENT
USER DIRECTION OF FEED
FW
+
CENTER LINES
OF CAVITY
D1
FOR COMPONENTS
2.0 mm × 1.2 mm
AND LARGER
BENDING RADIUS
R MIN.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS “R”
WITHOUT DAMAGE
EMBOSSED
CARRIER
*TOP COVER
TAPE THICKNESS (t1)
0.10 mm
(0.004”) MAX.
EMBOSSMENT
MAXIMUM COMPONENT ROTATION
10°
TYPICAL
COMPONENT CAVITY
CENTER LINE
100 mm
(3.937”)
1 mm MAX
TAPE
TYPICAL
COMPONENT
CENTER LINE
1 mm
250 mm
(0.039”) MAX (9.843”)
CAMBER (TOP VIEW)
ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm
Figure 4. Carrier Tape Specifications
EMBOSSED CARRIER DIMENSIONS (See Notes 1 and 2)
Tape B1
Size Max
D
D1
E
F
K
P
P0
P2
R
T
W
8 mm 4.35 mm
(0.171”)
1.5 +0.1/
–0.0 mm
(0.059
+0.004/
–0.0”)
1.0 mm
Min
(0.039”)
1.75
±0.1 mm
(0.069
±0.004”)
3.5
±0.5 mm
(1.38
±0.002”)
2.4 mm
(0.094”)
4.0
±0.10 mm
(0.157
±0.004”)
4.0
±0.1 mm
(0.156
±0.004”)
2.0
±0.1 mm
(0.079
±0.002”)
25 mm
(0.98”)
0.3
±0.05 mm
(0.01
+0.0038/
–0.0002”)
8.0
±0.3 mm
(0.315
±0.012”)
1. Metric Dimensions Govern–English are in parentheses for reference only.
2. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to
0.50 mm max. The component cannot rotate more than 10° within the determined cavity
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