Philips Semiconductors
High-speed double diodes
Product specification
1PS89SS04; 1PS89SS05; 1PS89SS06
FEATURES
• Power dissipation comparable to
SOT23
• Ultra small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 80 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
PINNING
1PS89SS..
PIN
04
05
06
1
a1
a1
k1
2
k2
a2
k2
3 k1, a2 k1, k2 a1, a2
fpage
3
APPLICATIONS
• High speed switching in e.g.
surface mounted circuits.
DESCRIPTION
Two high-speed switching diodes in
planar technology, with different
configurations, in an ultra small
SC-89 (SOT490) SMD plastic
package.
1
Top view
2
MBK837
Fig.1 Simplified outline
(SC-89; SOT490) and
pin configuration.
MARKING
TYPE NUMBER
1PS89SS04
1PS89SS05
1PS89SS06
MARKING
CODE
S4
S5
S6
3
1
2
MGL550
Fig.2 1PS89SS04 diode
configuration (symbol).
3
1
2
MGL551
Fig.3 1PS89SS05 diode
configuration (symbol).
3
1
2
MGL552
Fig.4 1PS89SS06 diode
configuration (symbol).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode unless otherwise specified
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Tamb = 25 °C; note 1; see Fig.5
single diode loaded
both diodes loaded
square wave; Tj = 25 °C prior to
surge; see Fig.7
t = 1 µs
t=1s
MIN. MAX. UNIT
−
85
V
−
80
V
−
200
mA
−
125
mA
−
500
mA
−
4
A
−
0.5
A
2001 Jan 09
2