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MSASC150W100L View Datasheet(PDF) - Microsemi Corporation

Part Name
Description
Manufacturer
MSASC150W100L
Microsemi
Microsemi Corporation Microsemi
MSASC150W100L Datasheet PDF : 2 Pages
1 2
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6823
(MSASC150W100L)
Features
Tungsten/Platinum schottky barrier
1N6823R
(MSASC150W100LR) Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
100 Volts
Very low thermal resistance
Available as standard polarity (strap-to-anode, 1N6823) and reverse
150 Amps
polarity (strap-to-cathode: 1N6823R)
Maximum Ratings @ 25°C (unless otherwise specified)
LOW LEAKAGE
SCHOTTKY DIODE
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc125°C
derating, forward current, Tc125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
1N6823
1N6823R
SYMBOL
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
θJC
MAX.
100
100
100
150
4
750
2
-65 to +150
-65 to +150
0.20
0.35
UNIT
Volts
Volts
Volts
Amps
Amps/°C
Amps
Amp
°C
°C
°C/W
Mechanical Outline
ThinKey™ 3
Low expansion
coef. metal (W or
Mo), Ni plated
Cu/Invar/Cu,
Ni plated
ceramic
Datasheet# MSC1028A
 

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