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P2NC70ZFP View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
P2NC70ZFP N-CHANNEL 700V - 7.3Ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™ Power MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
P2NC70ZFP Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
700
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
50
IGSS
Gate-body Leakage
VGS = ± 20V
±10
Current (VDS = 0)
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
3
4
5
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.7 A
7.3
8.5
DYNAMIC
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Coss eq. (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 0.7 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 560V
Test Conditions
VDD = 350 V, ID = 0.8 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 560V, ID = 1.6 A,
VGS = 10V
Min.
Typ.
1.2
305
34
3.6
28
Typ.
11
8
8
2
3.8
Max.
Max.
12
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 350 V, ID = 0.8 A
RG = 4.7VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 560V, ID = 1.6 A,
RG = 4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
27
30
20
5
25
Max.
Unit
V
µA
µA
µA
V
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
1.4
A
5.6
A
VSD (1) Forward On Voltage
ISD = 1.4 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.6 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
370
ns
1.3
µC
6.8
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/13
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