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STD1NC70Z-1 View Datasheet(PDF) - STMicroelectronics

Part NameSTD1NC70Z-1 ST-Microelectronics
STMicroelectronics ST-Microelectronics
DescriptionN-CHANNEL 700V - 7.3Ohm - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™ Power MOSFET


STD1NC70Z-1 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STP2NC70Z, STP2NC70ZFP
STD1NC70Z, STD1NC70Z-1
N-CHANNEL 700V - 7.3- 1.4A TO-220/FP/DPAK/IPAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
700 V
700 V
700 V
700 V
< 8.5
< 8.5
< 8.5
< 8.5
1.4 A
1.4 A
1.4 A
1.4 A
50 W
25 W
45 W
45 W
s TYPICAL RDS(on) = 7.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications..
TO-220
3
2
1
IPAK
3
2
1
TO-220FP
3
1
DPAK
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE
MARKING
STP2NC70Z
P2NC70Z
STP2NC70ZFP
P2NC70ZFP
STD1NC70ZT4
D1NC70Z
STD1NC70Z-1
D1NC70Z
February 2002
PACKAGE
TO-220
TO-220FP
DPAK
IPAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
1/13
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DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications..

■ TYPICAL RDS(on) = 7.3 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES

APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT

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