ST93C47TM1013TR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ST93C47TM1013TR Datasheet PDF : 13 Pages
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ST93C46A,46C,46T
ST93C47C,47T
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
DUAL ORGANIZATION: 64 x 16 or 128 x 8
BYTE/WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for ST93C46 version
– 3V to 5.5V for ST93C47 version
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH UP
PERFORMANCE for ”C” VERSION
ST93C46A, ST93C46C, ST93C46T,
ST93C47C, ST93C47T are replaced by the
M93C46
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
This specification covers a range of 1K bit serial
EEPROM products, the ST93C46A,46C,46T
specified at 5V±10% and the ST93C47C,47T
specified at 3V to 5.5V.
In the text, products are referred to as ST93C46.
The ST93C46 is a 1K bit Electrically Erasable
Programmable Memory (EEPROM) fabricated with
SGS-THOMSON’s High EnduranceSingle Polysili-
con CMOS technology. The memory is accessed
through a serial input (D) and output (Q).
Table 1. Signal Names
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
ORG
Organisation Select
VCC
Supply Voltage
VSS
Ground
D
C
S
ORG
VCC
ST93C46
ST93C47
VSS
Q
AI00871C
June 1997
This is information on a product still in production bu t not recommended for new de signs.
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