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Z0109MARL1G 데이터 시트보기 (PDF) - ON Semiconductor

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Z0109MARL1G TRIACS 1.0 AMPERE RMS 600 VOLTS ON-Semiconductor
ON Semiconductor ON-Semiconductor
Z0109MARL1G Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Z0109MA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, JunctiontoCase
RqJC
50
Thermal Resistance, JunctiontoAmbient
RqJA
160
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
TL
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = +125°C
IDRM, IRRM
Peak OnState Voltage
(ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
VTM
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 30 W)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
IGT
0.15
0.15
0.15
0.25
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
IL
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30 W)
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
VGT
Gate NonTrigger Voltage
(VD = 12 V, RL = 30 W, TJ = 125°C)
All Four Quadrants
VGD
0.2
Holding Current
(VD = 12 Vdc, Initiating Current = 50 mA, Gate Open)
DYNAMIC CHARACTERISTICS
IH
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
di/dt(c)
1.6
Critical Rate of Rise of OffState Voltage (VD = 67% Rated VDRM,
Exponential Waveform, Gate Open, TJ = 110°C)
Repetitive Critical Rate of Rise of OnState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
dv/dt
di/dt
50
75
Max Unit
5.0
mA
500
1.56
V
mA
10
10
10
10
mA
15
25
15
15
V
1.3
1.3
1.3
1.3
1.3
V
10
mA
A/ms
V/ms
20
A/ms
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