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Z0103NUF2AL2 View Datasheet(PDF) - STMicroelectronics

Part NameZ0103NUF2AL2 ST-Microelectronics
STMicroelectronics ST-Microelectronics
DescriptionStandard 1A Triacs
Z0103NUF2AL2 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
Z01
1
Characteristics
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
On-state rms current
(full sine wave)
SOT-223
TO-92
SMBflat-3L
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25 °C) F = 60 Hz
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
F = 120 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Ttab = 90 °C
TL = 50 °C
Ttab = 107 °C
t = 20 ms
t = 16.7 ms
1
8
8.5
0.35
Tj = 125 °C
20
Tj = 125 °C
Tj = 125 °C
1
1
- 40 to + 150
- 40 to + 125
A
A
A²s
A/µs
A
W
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
Z01
Unit
03
07
09
10
IGT (1)
VGT
VGD
IH (2)
VD = 12 V,
RL = 30 Ω
VD = VDRM,
RL = 3.3 kΩ,
Tj = 125 °C
IT = 50 mA
IL
IG = 1.2 IGT
I - II - III
3
MAX.
IV
5
ALL
MAX.
5
10
7
10
1.3
25
mA
25
V
ALL
MIN.
0.2
V
MAX.
7
10
10
25
mA
I - III - IV
7
10
15
25
MAX.
mA
II
15
20
25
50
dV/dt (2)
VD = 67% VDRM gate open
Tj = 110 °C
MIN.
(dV/dt)c (dI/dt)c = 0.44 A/ms,
(2)
Tj = 110 °C
MIN.
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
10
20
0.5
1
50
100 V/µs
2
5
V/µs
2/12
Doc ID 7474 Rev 10
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